How depletion layer or potential barrier is formed in the PN junction diode

In a PN junction diode holes are the majority carriers on P side whereas electrons are the majority carriers on n-side. The process of diffusion takes place due to which the majority carriers diffuse from one region to the other so the P-region becomes less positive and the n-region becomes less negative.

                        An imaginary battery is developed across the junction which prevents further movement of majority carriers and the voltage so developed is known as the potential barrier. The layer is known as the depletion layer. Continue reading “How depletion layer or potential barrier is formed in the PN junction diode”

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